Fabrication of metallic tip emitters using the scanning tunneling microscope

Author

Shkuratov, S.I. ; Dorofeev, I.A. ; Shilimanov, S.N. ; Polushkin, N.I. ; Pesterev, S.V. ; Salaschenko, N.N. ; Ivanov, S.N.

Author_Institution

Inst. of Electrophys., Acad. of Sci., Ekaterinburg, Russia

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

512

Abstract

Summary form only given. A technology for fabrication of metallic tip emitters using the scanning tunneling microscope (STM) has been developed. Results are presented of in situ investigations of tip emitters fabricated using STM in a field ion microscope, field electron emission microscope and field electron emission spectrometer. The field emission images, field emission current-voltage characteristics and total energy distribution of emitted electrons have been obtained. The tip formation mechanism is discussed. Factors influencing the tip parameters and field emission characteristics are considered: pulsed action modes, material and thickness of multilayer structures.

Keywords

electron field emission; field ion emission; microscopy; nanotechnology; scanning tunnelling microscopy; current-voltage characteristics; energy distribution; fabrication; field electron emission microscope; field electron emission spectrometer; field ion microscope; images; metallic tip emitters; multilayer structures; pulsed modes; scanning tunneling microscope; Cathodes; Electron emission; Electron microscopy; Fabrication; Nonhomogeneous media; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487102

Filename

487102