DocumentCode
3253267
Title
Investigation of Optimum Gate Workfunction for CMOS 4-Terminal MuGFETs
Author
Masahara, M. ; Surdeanu, R. ; Witters, L. ; Doornbos, G. ; Nguyen, V.H. ; Van den bosch, G. ; Vrancken, C. ; Jurczak, M. ; Biesemans, S.
Author_Institution
Nat. Inst. of AIST, Leuven
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
137
Lastpage
138
Abstract
The optimum gate WF for the pin-controllable CMOS 4T-MuGFETs has been experimentally investigated for the first time. Based on analysis of experimental data, it was concluded that the optimum gate WF is around 4.27eV (5.20eV) for NMOS (PMOS) 4T-MuGFETs
Keywords
CMOS integrated circuits; MOSFET; work function; CMOS 4-terminal MuGFET; NMOS; PMOS; optimum gate workfunction; Circuits; Conference proceedings; Degradation; Energy consumption; Fabrication; Hafnium oxide; MOS devices; MOSFETs; Tin; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284473
Filename
4062921
Link To Document