Title :
Comparative analysis of SRAM cells in sub-threshold region in 65nm
Author :
Madan, Raghav ; Gupta, Rishabh ; Nirwan, Bhawana Singh ; Grover, Anuj
Author_Institution :
ECE, IIIT-Delhi, Delhi, India
Abstract :
Continuous technology scaling and the growing trend of low power applications have led to focus on ultra low voltage operating memories. This work presents a report on different configurations of SRAM cells (6T and 10T) to operate in sub-threshold voltage region.
Keywords :
SRAM chips; power aware computing; SRAM cells; continuous technology scaling; low power applications; subthreshold voltage region; ultra low voltage operating memories; Computer architecture; MOS devices; Microprocessors; Noise; SRAM cells; Standards; Transistors; Eldo; SRAM; Spice; performance parameters; sub-threshold;
Conference_Titel :
Computer Engineering and Applications (ICACEA), 2015 International Conference on Advances in
Conference_Location :
Ghaziabad
DOI :
10.1109/ICACEA.2015.7164763
