Parameters of the tip arrays covered by low work function layers

Author

Evtukh, A.A. ; Litovchenko, V.G. ; Marchenko, R.I. ; Klyui, N.I. ; Semenovich, V. ; Nelep, C.

Author_Institution

Inst. of Semicond. Phys., Kiev, Ukraine

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

529

Lastpage

539

Abstract

Electron field emission from silicon tip arrays is investigated. Coating of the emitter surface with a suitable material is an attractive means to improve emission properties of tip arrays. The aim of our study is to enhance emission efficiency. To this end, different silicon tip array structures, namely (i) structures with a porous silicon layer on top of the tips, (ii) structures covered by carbon films, (iii) silicon tips implanted with hydrogen, (iv) Cs-enriched Si tips were prepared and investigated. For comparison and characterization purposes different structure parameters defining emission efficiency, namely the emitter work function, the field enhancement factor and the area factor were determined.

Keywords

cathodes; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; work function; Cs enrichment; Si; Si-C; Si:Cs; Si:H; area factor; carbon film; coatings; electron field emission; field enhancement factor; hydrogen implantation; porous silicon layer; silicon tip arrays; work function; Carbon dioxide; Chemical vapor deposition; Conductive films; Current measurement; Diodes; Optical films; Plasma displays; Semiconductor films; Silicon; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487108

Filename

487108