First Report on Self-Switching-Diodes in SOI

The work on SOI shows that SSDs can be compatible with advanced CMOS on SOI technologies, which greatly enhances the possibilities to practically use SSDs. One of the most significant advantages of SSDs is the remarkably simple process requiring only to create trenches in a semiconductor film. By combining a few SSDs, simple logic gates can be fabricated also in one lithography step (Song, 2003). The SSDs can also be used as memory cells working at room temperature as demonstrated in ref. 6. Furthermore, one can form a lateral gate on one side of the channel thus making a self-switching transistor (SST) opening more possibilities for applications. These various devices are under fabrication on SOI and characterisation in our group. We believe that that SSDs on SOI may provide remarkable simplicity and flexibility in circuit design and fabrication