Back-Gate Controlled Wide Tunable Range Diode Voltage in Asymmetrical Double-Gate Devices

An area-efficient wide tunable range diode voltage technique was proposed using back-gate controlled asymmetrical DG device. Examples for power gating in latches and SRAMs, and dynamic supply for SRAM read/write, were discussed and validated by mix-mode simulations. Due to the wide range of achievable supply voltage in the proposed scheme, it can be used in VLSI logic/SRAM applications including dynamic VDD for logic, voltage islands, power gating, separate VDD for logic and SRAM, SRAM with a sleep transistor, and dynamic VDD for SRAM read/write