Silicon-On-Insulator Bulk Acoustic Wave Disk Resonators

Author

Johari, Houri ; Ayazi, Farrokh

Author_Institution

Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

153

Lastpage

154

Abstract

This paper introduces the design and implementation of center-supported bulk acoustic wave (BAW) disk resonators on silicon-on-insulator (SOI) substrates. The use of a SOI substrate enables implementation of single crystal silicon disk resonators and provides electrical isolation between the disk and the substrate. A center-supported 800mum in diameter single crystal silicon disk resonator operated in a high order in-plane degenerate mode at 5.9MHz demonstrates an ultra high quality factor (Q) of 243,000. Lateral BAW disk resonators have the potential to be employed in filters, frequency references and sensors (in particular vibratory gyroscopes)

Keywords

Q-factor; bulk acoustic wave devices; silicon; silicon-on-insulator; surface acoustic wave resonators; 5.9 MHz; 800 micron; BAW disk resonators; SOI substrates; Si; bulk acoustic wave disk resonators; electrical isolation; quality factor; silicon-on-insulator substrates; single crystal silicon disk resonators; vibratory gyroscopes; Acoustic sensors; Acoustic waves; Conference proceedings; Electrodes; Hafnium; Q factor; Resonance; Resonant frequency; Resonator filters; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284482

Filename

4062930