Title :
Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm
Author :
Shimizu, Ken ; Tsutsui, Gen ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ.
Abstract :
This paper describes an experimental determination of the value of eta in ultra thin body (UTB) nMOSFET with SOI thickness ranging from 30 nm down to 5 nm. It is found experimentally for the first time that the eta value is larger than frac12 when SOI thickness is thinner than 12 nm. The meaning of eta value is discussed in terms of occupancy of the lowest subband of 2-fold-valley
Keywords :
MOSFET; many-valley semiconductors; silicon-on-insulator; 2-fold-valley; 5 to 30 nm; SOI thickness of 5nm; UTB nMOSFET; eta value; mobility universality; ultra thin body nMOSFET; Charge carrier density; Conference proceedings; Degradation; Density measurement; Ellipsometry; Fabrication; MOSFET circuits; Permittivity measurement; Phonons; Spectroscopy;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284486
