DocumentCode
3253527
Title
Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric
Author
Widiez, J. ; Vinet, M. ; Guillaumot, B. ; Poiroux, T. ; Lafond, D. ; Holliger, P. ; Weber, O. ; Barral, V. ; Previtali, B. ; Martin, F. ; Mouis, M. ; Deleonibus, S.
Author_Institution
CEA/DRT-LETI, Grenoble
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
161
Lastpage
162
Abstract
For the first time, we report ultra-thin fully depleted silicon-on-insulator MOS transistors with WSix metal gate on HfO gate dielectric down to 40nm gate length. Gate work function, short channel performance and carrier mobility are presented and compared to TiN gate devices. Higher mobility values are obtained with a WSix metal gate device in comparison with a TiN metal gate transistor
Keywords
MOSFET; carrier mobility; hafnium compounds; silicon-on-insulator; titanium compounds; tungsten compounds; work function; 40 nm; HfO2; MOSFET; TiN; WSi; carrier mobility; gate dielectric; gate work function; silicon-on-insulator; Annealing; Conference proceedings; Dielectric materials; Fluctuations; Hafnium oxide; High K dielectric materials; MOSFETs; Threshold voltage; Tin; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284487
Filename
4062935
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