Title :
Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric
Author :
Widiez, J. ; Vinet, M. ; Guillaumot, B. ; Poiroux, T. ; Lafond, D. ; Holliger, P. ; Weber, O. ; Barral, V. ; Previtali, B. ; Martin, F. ; Mouis, M. ; Deleonibus, S.
Author_Institution :
CEA/DRT-LETI, Grenoble
Abstract :
For the first time, we report ultra-thin fully depleted silicon-on-insulator MOS transistors with WSix metal gate on HfO gate dielectric down to 40nm gate length. Gate work function, short channel performance and carrier mobility are presented and compared to TiN gate devices. Higher mobility values are obtained with a WSix metal gate device in comparison with a TiN metal gate transistor
Keywords :
MOSFET; carrier mobility; hafnium compounds; silicon-on-insulator; titanium compounds; tungsten compounds; work function; 40 nm; HfO2; MOSFET; TiN; WSi; carrier mobility; gate dielectric; gate work function; silicon-on-insulator; Annealing; Conference proceedings; Dielectric materials; Fluctuations; Hafnium oxide; High K dielectric materials; MOSFETs; Threshold voltage; Tin; Very large scale integration;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284487
