Extraction of impurity concentration profiles by the DCIV method

Author

Wang, Yih ; Sah, Chih-Tang

Author_Institution

Florida Univ., Gainesville, FL, USA

fYear

2001

fDate

2001

Firstpage

29

Lastpage

32

Abstract

The lineshape of the DCIV (Base Current vs Gate Voltage) characteristics is used to extract the spatial variation of the surface impurity concentration in the drain and source extension regions, the drain and source junction regions, and the basewell channel region. Examples are presented to illustrate nanometer spatial resolution of defect enhanced impurity diffusion, nitride barrier against boron penetration through thin gate oxide, and strain-induced interface traps

Keywords

MOSFET; diffusion; doping profiles; electron traps; impurity distribution; semiconductor device measurement; DCIV method; MOSFETs; Si; base current vs gate voltage characteristics; basewell channel region; defect enhanced impurity diffusion; extension regions; impurity concentration profiles; junction regions; nitride barrier; spatial variation; strain-induced interface traps; surface impurity concentration; Boron; Charge carrier processes; Electric variables measurement; Electron traps; Length measurement; MOSFETs; Semiconductor impurities; Silicon; Spatial resolution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

0-7803-6412-0

Type

conf

DOI

10.1109/VTSA.2001.934475

Filename

934475