Title :
Analytical Design of High-Power MTO Thyristors
Author :
Plum, Thomas ; De Doncker, Rik W.
Author_Institution :
RWTH Aachen Univ., Aachen
Abstract :
The design of semiconductor devices is usually performed with finite element methods. In this paper an analytical approach for the design of a high- power MOS turn-off thyristor (MTO) is presented. The model enables the calculation of on-state voltage drop and turn-off losses analytically. The results are compared to a finite-element (FE) model of the MTO. The analytical model offers a high degree of accuracy together with fast calculation times and can therefore be used to find an optimized device design for a given application.
Keywords :
finite element analysis; thyristors; FE model; finite element methods; finite-element model; high-power MOS turn-off thyristor; semiconductor devices design; Analytical models; Computational modeling; Doping; Finite element methods; MOSFET circuits; Performance analysis; Process design; Semiconductor devices; Thyristors; Voltage;
Conference_Titel :
Power Electronics and Drive Systems, 2007. PEDS '07. 7th International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0645-6
Electronic_ISBN :
978-1-4244-0645-6
DOI :
10.1109/PEDS.2007.4487684
