GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics

Author

Jae-Woo Park ; Mohammadi, S. ; Pavlidis, D. ; Dua, C. ; Guyaux, J.L. ; Garcia, J.-G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

1998

fDate

7-12 June 1998

Firstpage

39

Abstract

Monolithic broadband transimpedance amplifiers were developed using GaInP/GaAs single HBTs. The HBTs showed a cutoff frequency (f/sub T/) of 60 GHz and maximum oscillation frequency (f/sub max/) of 100 GHz. The fabricated amplifiers had a maximum bandwidth of 19 GHz and an associated transimpedance gain of 47 dB/spl Omega/ The large signal characteristics of two transimpedance amplifier designs with similar gain were also investigated and showed that the cascode approach is much less sensitive to input power level.

Keywords

MMIC amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 100 GHz; 19 GHz; 60 GHz; GaInP-GaAs; GaInP/GaAs HBT; HF large signal characteristics; HF small signal characteristics; broadband amplifiers; cascode approach; high frequency characteristics; monolithic transimpedance amplifiers; Broadband amplifiers; Chemical technology; Degradation; Etching; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical receivers; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.689319

Filename

689319