K/Ka-band low-noise embedded transmission line (ETL) MMIC amplifiers

Author

Hua-Quen Tserng ; Witkowski, L. ; Ketterson, A. ; Saunier, P. ; Jones, T.

Author_Institution

MMIC R&D Lab., TriQuint Semicond. Texas Inc., Dallas, TX, USA

Volume

1

fYear

1998

fDate

7-12 June 1998

Firstpage

43

Abstract

The design, fabrication, and performance of producible, high-performance K-, and Ka-band pHEMT low-noise MMIC amplifiers using the embedded transmission line (ETL) circuit concept with top-side grounding are reported. A state-of-the-art noise figure of 1.2 dB with 25 dB gain is achieved at 31 GHz. These amplifiers can be implemented in low-cost, ultra compact receiver modules for emerging spaceborne phased-array communication applications.

Keywords

HEMT integrated circuits; MMIC amplifiers; field effect MIMIC; field effect MMIC; integrated circuit noise; millimetre wave amplifiers; 1.2 dB; 18 to 32 GHz; 25 dB; EHF; K-band; Ka-band; MIMIC LNA; PHEMT MMIC LNA; SHF; embedded transmission line; fabrication; low-noise MMIC amplifiers; spaceborne phased-array communication applications; top-side grounding; ultra compact receiver modules; Dielectric substrates; Distributed parameter circuits; Gallium arsenide; Heat transfer; Low-noise amplifiers; MMICs; PHEMTs; Polyimides; Power transmission lines; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.689320

Filename

689320