Title :
Intergrated 1.55 /spl mu/m receivers using GaAs MMICs and thin film InP detectors
Author :
Carl Chun ; Vendier, O. ; Moon, E. ; Lakar, J. ; Hyeon Cheol Ki ; Jokerst, N.M. ; Brooke, M.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A GaAs-based amplifier has been designed and integrated with a large area, high efficiency, thin film InP-based metal-semiconductor-metal photodetector. Thin film integration is a hybrid integration scheme that minimizes the parasitics between the InP detector and the GaAs circuit to the order of integrated circuits. The GaAs integrated circuits are fabricated using a commercial TriQuint Semiconductor foundry process, demonstrating the use of standard GaAs-based foundry circuits for long wavelength, highly integrated, high speed, low cost photoreceivers. Utilizing thin film integration to minimize interconnect parasitics, a 1.55 /spl mu/m wavelength receiver has been demonstrated at 1 GB/s, and initial results for a 10 GB/s receiver under fabrication are presented.
Keywords :
MMIC amplifiers; gallium arsenide; hybrid integrated circuits; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; thin film circuits; 1 GB/s; 1.55 micron; 10 GB/s; GaAs; GaAs MMICs; GaAs integrated circuits; GaAs-based amplifier; InP; TriQuint Semiconductor foundry process; high speed photoreceivers; hybrid integration scheme; interconnect parasitics minimisation; large area photodetector; long wavelength MSM photodetector; low cost photoreceivers; metal-semiconductor-metal photodetector; thin film InP detectors; Detectors; Foundries; Gallium arsenide; Hybrid integrated circuits; Indium phosphide; MMICs; Photodetectors; Semiconductor thin films; Thin film circuits; Transistors;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689321
