Effects of polysilicon shield on spiral inductors for silicon-based RF IC´s

Author

Sia, C.B. ; Yeo, K.S. ; Goh, W.L. ; Swe, T.N. ; Ng, C.Y. ; Chew, W. ; Loh, W.B. ; Chu, Sanford ; Chan, Lap

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2001

fDate

2001

Firstpage

158

Lastpage

161

Abstract

Increasing demands for more affordable personal mobile communication equipment have motivated research and development of low cost, high performance silicon-based on-chip inductors. Current silicon technology uses a conductive substrate, which causes unwanted energy dissipation. Inserting a patterned polysilicon shield beneath inductors can help reduce this substrate loss. Effects of the polysilicon ground shield on inductor performance have been investigated. An inductor utilizing a new high resistivity polysilicon floating shield is shown in this paper to have improved inductive characteristics

Keywords

CMOS integrated circuits; Q-factor; UHF integrated circuits; elemental semiconductors; inductors; shielding; silicon; RF IC; Si; Si-based RFICs; ground shield; high resistivity floating shield; onchip inductors; patterned polysilicon shield; polysilicon shield; spiral inductors; substrate loss reduction; Active inductors; Costs; Energy dissipation; Mobile communication; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

0-7803-6412-0

Type

conf

DOI

10.1109/VTSA.2001.934507

Filename

934507