• DocumentCode
    325436
  • Title

    Comparison of quasi-2D and ensemble Monte Carlo simulations for deep submicron HEMTs

  • Author

    Morton, C.G. ; Snowden, C.M.

  • Author_Institution
    Hewlett-Packard Co., Santa Rosa, CA, USA
  • Volume
    1
  • fYear
    1998
  • fDate
    7-12 June 1998
  • Firstpage
    153
  • Abstract
    In this paper, we present corroborative material indicating the accuracy of our quasi-2D HEMT model when applied to the analysis of deep sub-micron devices. We compare our modelling results with those derived from ensemble Monte Carlo simulations, and demonstrate excellent agreement in the velocity profiles for 0.5, 0.25 and 0.05 micrometre gate-length devices.
  • Keywords
    Monte Carlo methods; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 0.05 to 0.5 micron; HEMT models; deep submicron HEMTs; ensemble Monte Carlo simulation; quasi-2D simulation; velocity profiles; Charge carrier density; HEMTs; MODFETs; Microwave Theory and Techniques Society; Microwave devices; Millimeter wave technology; Poisson equations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1998 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-4471-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1998.689345
  • Filename
    689345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=325436