Title :
Comparison of quasi-2D and ensemble Monte Carlo simulations for deep submicron HEMTs
Author :
Morton, C.G. ; Snowden, C.M.
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
Abstract :
In this paper, we present corroborative material indicating the accuracy of our quasi-2D HEMT model when applied to the analysis of deep sub-micron devices. We compare our modelling results with those derived from ensemble Monte Carlo simulations, and demonstrate excellent agreement in the velocity profiles for 0.5, 0.25 and 0.05 micrometre gate-length devices.
Keywords :
Monte Carlo methods; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 0.05 to 0.5 micron; HEMT models; deep submicron HEMTs; ensemble Monte Carlo simulation; quasi-2D simulation; velocity profiles; Charge carrier density; HEMTs; MODFETs; Microwave Theory and Techniques Society; Microwave devices; Millimeter wave technology; Poisson equations;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689345
