Title :
Extrinsic elements extraction of DGMESFET
Author :
Wei-Kung Deng ; Tah-Hsiung Chu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A procedure for the extraction of extrinsic elements of dual-gate MESFET (DGMESFET) is described in this paper. It is the first time to accurately extract the extrinsic elements of series resistance by considering the distributed channel resistance under the regions of two gates with the use of the "end resistance measurement" method. The extrinsic elements of capacitance and inductance are extracted by three-port Y-matrix and Z-matrix calculation from cold measurements. The developed procedure is useful for the characterization of DGMESFET.
Keywords :
Schottky gate field effect transistors; capacitance; electric resistance; equivalent circuits; inductance; matrix algebra; microwave field effect transistors; semiconductor device models; DGMESFET characterization; capacitance; distributed channel resistance; dual-gate MESFET; end resistance measurement; extrinsic elements extraction; inductance; series resistance; three-port Y-matrix calculation; three-port Z-matrix calculation; Capacitance; Electric resistance; Electrical resistance measurement; Equations; Equivalent circuits; FETs; Inductance measurement; MESFETs; Microwave circuits; Time measurement;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689346
