Title :
An 18 GHz Si bipolar mold package prescaler
Author :
Mineo, M. ; Okamoto, M. ; Hosoki, K. ; Ohba, H.
Author_Institution :
Microwave & Satellite Comm. Div., NEC Corp., Yokohama, Japan
Abstract :
A mold package static prescaler operating at 18 GHz has been realized. The technology used is the Si bipolar process of which the emitter mask width is 0.8 /spl mu/m. The cut-off frequency and the maximum oscillation frequency are 30 GHz and 40 GHz respectively. The input power range of operations is more than 10 dB in -70 to +95/spl deg/C at 1 to 15 GHz. This prescaler features a +5 V single supply voltage and 190 mW power dissipation.
Keywords :
bipolar digital integrated circuits; elemental semiconductors; integrated circuit layout; integrated circuit packaging; prescalers; silicon; -70 to 95 C; 0.8 micron; 18 GHz; 190 mW; 30 GHz; 40 GHz; 5 V; Si; Si bipolar fabrication process; Si bipolar prescaler; mold package prescaler; static prescaler; Bonding; Circuit synthesis; Costs; Cutoff frequency; Frequency conversion; Large scale integration; Local oscillators; Packaging; Power dissipation; Satellites;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689351
