DocumentCode
3254539
Title
Sub-quarter micron Si-gate CMOS with ZrO2 gate dielectric
Author
Hobbs, C. ; Dip, L. ; Reid, K. ; Gilmer, D. ; Hegde, R. ; Ma, T. ; Taylor, B. ; Cheng, B. ; Samavedam, S. ; Tseng, H. ; Weddington, D. ; Huang, F. ; Farber, D. ; Schippers, M. ; Rendon, M. ; Prabhu, L. ; Rai, R. ; Bagchi, S. ; Conner, J. ; Backer, S. ; Du
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
2001
fDate
2001
Firstpage
204
Lastpage
207
Abstract
MOSFETs with a zirconium dioxide (ZrO2) gate dielectric and poly-silicon gate were fabricated using a low temperature CMOS process. Well-behaved transistor characteristics were obtained for devices with sizes of 14 μm×1.4 μm or smaller. Devices 14 μm×14 μm or larger were found to be nonfunctional due to the formation of Zr-silicide at the polySi-gate/Zr02 interface. In this paper, we present results on the electrical and physical characterization
Keywords
CMOS integrated circuits; MOSFET; VLSI; characteristics measurement; dielectric thin films; elemental semiconductors; integrated circuit measurement; silicon; zirconium compounds; 1.4 micron; 14 micron; MOSFETs; Si-ZrO2; ZrO2 gate dielectric; electrical characterization; low temperature CMOS process; physical characterization; sub-quarter micron Si-gate CMOS; transistor characteristics; Annealing; CMOS process; Dielectric materials; Dielectric substrates; Leakage current; MOSFETs; Permittivity; Silicon; Temperature; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
0-7803-6412-0
Type
conf
DOI
10.1109/VTSA.2001.934520
Filename
934520
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