Title :
New extraction method for FET extrinsic capacitances using active bias conditions
Author :
Lenk, F. ; Doerner, R.
Author_Institution :
Ferdinand-Braun-Inst., Berlin, Germany
Abstract :
A new procedure for extracting the extrinsic capacitances of FETs is presented. It requires measurements only in the active bias regime. The method utilizes the symmetry of the intrinsic FET in the forward and reverse biased operating regime. The extraction is performed analytically and does not require any optimization.
Keywords :
capacitance; field effect transistors; semiconductor device models; FET extrinsic capacitance; active bias; parameter extraction; symmetry; Admittance; Capacitance; Data mining; Equivalent circuits; FETs; Feedback; Gallium arsenide; MESFETs; Measurement uncertainty; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689374
