Ultrathin ox/nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD

Author

Wang, M.F. ; Chen, S.C. ; Yu, M.C. ; Hou, T.H. ; Lin, Y.M. ; Chcn, S.C. ; Fang, Y.K. ; Yu, C.H. ; Liang, M.S.

Author_Institution

Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan

fYear

2001

fDate

2001

Firstpage

208

Lastpage

211

Abstract

The paper gives a short overview of ox/nitride gate stack prepared by rapid thermal chemical vapor deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the dissimilar characteristics of different interfacial oxide in ox/nitride gate stack. Post deposition annealing is also investigated including NH ₃ and N₂O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability

Keywords

CMOS integrated circuits; VLSI; annealing; chemical vapour deposition; dielectric thin films; integrated circuit reliability; leakage currents; rapid thermal processing; N₂O; NH₃; RTCVD; SiO₂-Si₃N₄; driving current; gate dielectric reliability; gate leakage current; interface density; post deposition annealing; rapid thermal chemical vapor deposition; sub-quarter-micron CMOS devices; ultrathin ox/nitride gate stack; Annealing; CMOS process; Chemical vapor deposition; Dielectric devices; Dielectric materials; Electric variables; High-K gate dielectrics; Leakage current; MOS devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

0-7803-6412-0

Type

conf

DOI

10.1109/VTSA.2001.934521

Filename

934521