Title :
Ultrathin ox/nitride gate stack for sub-quarter-micron CMOS devices prepared by RTCVD
Author :
Wang, M.F. ; Chen, S.C. ; Yu, M.C. ; Hou, T.H. ; Lin, Y.M. ; Chcn, S.C. ; Fang, Y.K. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
Abstract :
The paper gives a short overview of ox/nitride gate stack prepared by rapid thermal chemical vapor deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the dissimilar characteristics of different interfacial oxide in ox/nitride gate stack. Post deposition annealing is also investigated including NH 3 and N2O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability
Keywords :
CMOS integrated circuits; VLSI; annealing; chemical vapour deposition; dielectric thin films; integrated circuit reliability; leakage currents; rapid thermal processing; N2O; NH3; RTCVD; SiO2-Si3N4; driving current; gate dielectric reliability; gate leakage current; interface density; post deposition annealing; rapid thermal chemical vapor deposition; sub-quarter-micron CMOS devices; ultrathin ox/nitride gate stack; Annealing; CMOS process; Chemical vapor deposition; Dielectric devices; Dielectric materials; Electric variables; High-K gate dielectrics; Leakage current; MOS devices; Temperature;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934521
