Title :
A study of bimodal distributions of time-to-failure of copper via electromigration
Author :
Lai, J.B. ; Yang, J.L. ; Wang, Y.P. ; Chang, S.H. ; Hwang, R.L. ; Huang, Y.S. ; Hou, C.S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
Bimodal distributions of time-to-failure (TTF) were often seen in copper via electromigration (EM) tests. The failure mechanism of the stressed samples could be correlated to time-to-failure of the EM test. Early-failures were via-related, whereas late-failures were metal-stripe-related. The failure mechanisms are discussed
Keywords :
copper; electromigration; failure analysis; integrated circuit metallisation; integrated circuit reliability; Cu; Cu via electromigration; bimodal distributions; early failures; failure mechanism; late failures; metal-stripe-related failures; stressed samples; time-to-failure; via electromigration tests; via-related failures; Artificial intelligence; Copper; Electromigration; Failure analysis; Grain boundaries; Scanning electron microscopy; Semiconductor device manufacture; Testing; Transmission electron microscopy; Wet etching;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934537
