Title :
Pulsed power application assisted by power semiconductor devices
Author :
Ishii, S. ; Yasuoka, K. ; Ibuka, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
Pulsed power technology is progressively employed in industrial applications. Power semiconductor devices are promoting the development. The technical issues on power devices for pulsed power applications are summarized. A promising candidate for the fast high power switch is SI-thyristors whose capability has been verified experimentally. We point out the importance of experimental investigation on the temporal and spatial behavior of free carriers in the power devices
Keywords :
carrier density; power semiconductor devices; power semiconductor switches; pulsed power technology; thyristors; SI-thyristor; carrier number density; high-power switch; industrial application; power semiconductor device; pulsed power technology; Circuits; Optical pulses; Plasma applications; Plasma sources; Power semiconductor devices; Power semiconductor switches; Pulse generation; Space vector pulse width modulation; Sparks; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934549
