• DocumentCode
    3255066
  • Title

    Thermal Analysis of Rectangular Nd:YVO4 Crystal Double-Side-Pumped by LD

  • Author

    Chen, Wen ; Shi, Peng ; Hua, Zhongwen ; Li, Long ; Gan, Ansheng

  • Author_Institution
    Sch. of Sci., Xi´´an Univ. of Archit. & Technol., Xi´´an, China
  • fYear
    2009
  • fDate
    14-16 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Based on analytical theory, distributions of temperature field and thermal distortion field in a rectangular Nd:YVO4 crystal double-side-pumped by LD are investigated. Through the analysis of working characteristics of Nd:YVO4 crystal, a thermal model that matches actual situations of Nd:YVO4 crystal is established. General expressions of temperature field and thermal distortion field in Nd:YVO4 crystal are obtained. And two methods of effectively reducing thermal distortion in Nd:YVO4 crystal are put forward. Results show that a maximum temperature rise of 362.2degC and a maximum thermal distortion of 5.55 mum are obtained in Nd:YVO4 crystal when the output power of the two laser diodes used to pump the Nd:YVO4 crystal are both 30 W. When the off-center distance is 0.6 mm, the maximum thermal distortion can be reduced by 37.7%; when the thickness of the crystal is reduced by 30%, the maximum thermal distortion can be reduced by 31.7%. Results in this paper can offer theoretical base for better solving thermal problems in laser system.
  • Keywords
    neodymium; optical materials; optical pumping; semiconductor lasers; temperature distribution; thermo-optical effects; YVO4:Nd; distance 0.6 mm; power 30 W; rectangular crystal double-side-pumped laser diode; temperature 362.2 degC; temperature field distribution; thermal analysis; thermal distortion; Diode lasers; Heat sinks; Laser excitation; Laser modes; Laser noise; Optical distortion; Optical films; Pump lasers; Temperature; Thermal factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-4412-0
  • Type

    conf

  • DOI
    10.1109/SOPO.2009.5230310
  • Filename
    5230310