Title :
4.5 kV 4H-SiC diodes with ideal forward characteristic
Author :
Lendenmann, H. ; Mukhitdinov, A. ; Bleichner, H. ; Irwin, Mike ; Soderholm, R.
Author_Institution :
ABB Corp. Res., Vasteras
Abstract :
4H-SiC diodes with 4.5 kV blocking and epitaxially grown anode emitters show near theoretical forward voltages of 3.08 V at 100 A/cm 2 and 4.10 V at 1000 A/cm2 at RT (2.96 V and 4.15 V at 125°C), while diodes with implanted emitters show 3.5-3.8 V at 100 A/cm2 with -4 mV/K. The transient recovery losses (Erec, Qrr) are as low as 1/100 of the reference silicon device. Paralleling of the SiC diodes with silicon IGBTs enables 400 A switching, and system loss savings of nearly 50% compared to state-of-art silicon technology
Keywords :
power semiconductor diodes; silicon compounds; wide band gap semiconductors; 4.5 kV; 400 A; 4H-SiC diode; SiC; blocking voltage; epitaxial anode emitter; forward voltage; implanted emitter; power semiconductor device; switching characteristics; transient recovery loss; Anodes; Charge carrier lifetime; Crystalline materials; Doping; Fasteners; Insulated gate bipolar transistors; Schottky diodes; Silicon carbide; Silicon devices; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934553
