4.5 kV 4H-SiC diodes with ideal forward characteristic

Author

Lendenmann, H. ; Mukhitdinov, A. ; Bleichner, H. ; Irwin, Mike ; Soderholm, R.

Author_Institution

ABB Corp. Res., Vasteras

fYear

2001

fDate

2001

Firstpage

31

Lastpage

34

Abstract

4H-SiC diodes with 4.5 kV blocking and epitaxially grown anode emitters show near theoretical forward voltages of 3.08 V at 100 A/cm ² and 4.10 V at 1000 A/cm² at RT (2.96 V and 4.15 V at 125°C), while diodes with implanted emitters show 3.5-3.8 V at 100 A/cm² with -4 mV/K. The transient recovery losses (E_rec, Q_rr) are as low as 1/100 of the reference silicon device. Paralleling of the SiC diodes with silicon IGBTs enables 400 A switching, and system loss savings of nearly 50% compared to state-of-art silicon technology

Keywords

power semiconductor diodes; silicon compounds; wide band gap semiconductors; 4.5 kV; 400 A; 4H-SiC diode; SiC; blocking voltage; epitaxial anode emitter; forward voltage; implanted emitter; power semiconductor device; switching characteristics; transient recovery loss; Anodes; Charge carrier lifetime; Crystalline materials; Doping; Fasteners; Insulated gate bipolar transistors; Schottky diodes; Silicon carbide; Silicon devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934553

Filename

934553