1.8 kV, 3.8 A bipolar junction transistors in 4H-SiC

Author

Ryu, Sei-Hyung ; Agarwal, Anant K. ; Palmour, John W. ; Levinshtein, Michael E.

Author_Institution

Cree Inc., Durham, NC, USA

fYear

2001

fDate

2001

Firstpage

37

Lastpage

40

Abstract

High voltage npn bipolar junction transistors in 4H-SiC are presented in this paper. The BJTs were able to block 1800 V in common emitter mode and showed a peak current gain of 20 and an on-resistance of 10.8 mΩ·cm² at room temperature. Temperature-stable current gain was observed for these devices. This is due to the higher percent ionization of the deep level acceptor atoms in the base region at elevated temperatures, which offsets the effects of increased minority carrier lifetime at high temperatures. These transistors show a positive temperature coefficient in the on-resistance characteristics, which will enable easy paralleling of the devices

Keywords

carrier lifetime; deep levels; minority carriers; power bipolar transistors; silicon compounds; wide band gap semiconductors; 1.8 kV; 3.8 A; 4H-SiC high-voltage npn bipolar junction transistor; SiC; blocking voltage; current gain; deep level acceptor ionization; minority carrier lifetime; on-resistance; temperature coefficient; temperature stability; Breakdown voltage; Charge carrier lifetime; Etching; Fingers; Ion implantation; Ionization; MOSFETs; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934554

Filename

934554