Title :
Static and dynamic characteristics of 4-6 kV 4H-SiC SIAFETs
Author :
Takayama, D. ; Sugawara, Y. ; Hayashi, T. ; Singh, R. ; Palmour, J. ; Ryu, S. ; Asano, K.
Author_Institution :
Tech. Res. Center, Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
A novel high voltage SiC MOS device named SIAFET (Static induction Injected Accumulated FET) was fabricated by using 4H-SiC, and both a high blocking voltage of 6.1 kV and a low specific on resistance (RonS) of 732 mΩ cm2 were achieved at the same time. Its dynamic characteristics were investigated in addition to those of a 4.5 kV SIAFET for the first time, and it was demonstrated that the influence of an injected current on the turn-off time was very small. Thus, the SIAFET was confirmed to be able to achieve not only high BV and low RonS, but also a high switching speed
Keywords :
power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 4 to 6 kV; 4H-SiC SIAFET; SiC; blocking voltage; current injection; dynamic characteristics; high-voltage MOS device; specific on-resistance; static characteristics; static induction injected accumulated field effect transistor; switching speed; turn-off time; Electric resistance; FETs; Fabrication; Leakage current; MOS devices; MOSFET circuits; Power industry; Silicon carbide; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934555
