High temperature characteristics of 5 kV, 20 A 4H-SiC PiN rectifiers

Author

Singh, Ranbir ; Hefner, A.R. ; Berning, D. ; Palmour, John W.

Author_Institution

Cree Inc., Durham, NC, USA

fYear

2001

fDate

2001

Firstpage

45

Lastpage

48

Abstract

This paper reports the design, fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) mere used in order to get good on-state and stable blocking characteristics. A forward voltage drop of less than 5 V was observed at 500 A/cm² in the entire 25 to 225°C temperature range. The reverse recovery characteristics show only a modest 50% increase in the peak reverse recovery current from 25°C to 225°C. Measurements at a forward current density of 150 A/cm² show that a four orders of magnitude reduction in Q_rr is obtained in 4H-SiC rectifiers as compared to comparably rated Si rectifiers

Keywords

high-temperature electronics; p-i-n diodes; power semiconductor diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 20 A; 25 to 225 C; 4H-SiC PiN rectifier; 5 kV; SiC; blocking voltage; forward voltage; high temperature characteristics; highly doped p-type epitaxial anode layer; junction termination extension; on-state resistance; power semiconductor device; reverse recovery current; Anodes; Current density; Current measurement; Density measurement; Fabrication; Process design; Q measurement; Rectifiers; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934556

Filename

934556