Title :
High temperature characteristics of 5 kV, 20 A 4H-SiC PiN rectifiers
Author :
Singh, Ranbir ; Hefner, A.R. ; Berning, D. ; Palmour, John W.
Author_Institution :
Cree Inc., Durham, NC, USA
Abstract :
This paper reports the design, fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) mere used in order to get good on-state and stable blocking characteristics. A forward voltage drop of less than 5 V was observed at 500 A/cm2 in the entire 25 to 225°C temperature range. The reverse recovery characteristics show only a modest 50% increase in the peak reverse recovery current from 25°C to 225°C. Measurements at a forward current density of 150 A/cm2 show that a four orders of magnitude reduction in Qrr is obtained in 4H-SiC rectifiers as compared to comparably rated Si rectifiers
Keywords :
high-temperature electronics; p-i-n diodes; power semiconductor diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 20 A; 25 to 225 C; 4H-SiC PiN rectifier; 5 kV; SiC; blocking voltage; forward voltage; high temperature characteristics; highly doped p-type epitaxial anode layer; junction termination extension; on-state resistance; power semiconductor device; reverse recovery current; Anodes; Current density; Current measurement; Density measurement; Fabrication; Process design; Q measurement; Rectifiers; Temperature distribution; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934556
