Innovative press pack modules for high power IGBTs

Author

Kaufmann, Stefan ; Lang, Thomas ; Chokhawala, Rahul

Author_Institution

ABB Semicond. AG, Lenzburg, Switzerland

fYear

2001

fDate

2001

Firstpage

59

Lastpage

62

Abstract

A new IGBT press pack package was developed to meet increasingly challenging requirements for high power converters, such as in power systems applications. The package offers significantly high tolerance to pressure nonuniformity and allows up to 100 kN of stacking pressure while effectively protecting sensitive silicon chips by using a flexible contact concept. The package is resilient to explosion and is designed to provide short circuit contact upon eventual failure. Modular design is adapted to achieve high degree of standardization and provide flexibility in current rating at the same time

Keywords

insulated gate bipolar transistors; modules; semiconductor device packaging; current rating; explosion resistance; flexible contact; high-power IGBT package; modular design; power converter; power system; press pack module; short-circuit failure mode; silicon chip protection; stack pressure management; standardization; Circuits; Costs; HVDC transmission; Insulated gate bipolar transistors; Power system management; Power system protection; Semiconductor device packaging; Semiconductor devices; Stacking; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934559

Filename

934559