Title :
Novel Ternary Storage Cells and Techniques for Leakage Reduction in Ternary CAM
Author :
Mohan, Nitin ; Sachdev, Manoj
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON
Abstract :
Architectural innovations are reducing the dynamic power in ternary content addressable memories (TCAMs). Thus, the static power is becoming a significant portion of the total TCAM power. This paper presents two novel ternary storage cells that exploit the unique properties of TCAMs for reducing the cell leakage. Simulation results of the proposed cells show up to 41% leakage reduction over the conventional TCAM cell.
Keywords :
content-addressable storage; leakage currents; low-power electronics; leakage reduction; ternary CAM; ternary content addressable memories; ternary storage cells; Associative memory; CADCAM; CMOS technology; Computer aided manufacturing; Gate leakage; Logic; MOS devices; Random access memory; Subthreshold current; Water storage;
Conference_Titel :
SOC Conference, 2006 IEEE International
Conference_Location :
Taipei
Print_ISBN :
0-7803-9781-9
Electronic_ISBN :
0-7803-9782-7
DOI :
10.1109/SOCC.2006.283904
