DocumentCode :
3255233
Title :
Dimple-array interconnect technique for packaging power semiconductor devices and modules
Author :
Wen, Simon S. ; Huff, Daniel ; Lu, Guo-Quan
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear :
2001
fDate :
2001
Firstpage :
69
Lastpage :
74
Abstract :
This paper reports a simple non-wire bond interconnect technique, termed Dimple-Array Interconnect (DAI) technique for packaging power devices. Solder bumps and dimpled metal sheets that are capable of carrying large currents are utilized for interconnecting power chips. Preliminary experimental and analytical results demonstrated potential advantages of this technique such as reduced dc resistance and parasitic noises, improved heat dissipation and thermo-mechanical reliability, and lowered processing complexity. This technique also offers a potential approach for packaging power electronics modules
Keywords :
modules; power semiconductor devices; semiconductor device packaging; DC resistance; dimple-array interconnect; heat dissipation; integrated power electronics module; packaging; parasitic noise; power semiconductor device; thermomechanical reliability; Bonding; Electronic packaging thermal management; Electronics packaging; Integrated circuit packaging; Polymer films; Power electronics; Power semiconductor devices; Power system interconnection; Semiconductor device packaging; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
ISSN :
1063-6854
Print_ISBN :
4-88686-056-7
Type :
conf
DOI :
10.1109/ISPSD.2001.934561
Filename :
934561
Link To Document :
بازگشت