• DocumentCode
    3255233
  • Title

    Dimple-array interconnect technique for packaging power semiconductor devices and modules

  • Author

    Wen, Simon S. ; Huff, Daniel ; Lu, Guo-Quan

  • Author_Institution
    Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    69
  • Lastpage
    74
  • Abstract
    This paper reports a simple non-wire bond interconnect technique, termed Dimple-Array Interconnect (DAI) technique for packaging power devices. Solder bumps and dimpled metal sheets that are capable of carrying large currents are utilized for interconnecting power chips. Preliminary experimental and analytical results demonstrated potential advantages of this technique such as reduced dc resistance and parasitic noises, improved heat dissipation and thermo-mechanical reliability, and lowered processing complexity. This technique also offers a potential approach for packaging power electronics modules
  • Keywords
    modules; power semiconductor devices; semiconductor device packaging; DC resistance; dimple-array interconnect; heat dissipation; integrated power electronics module; packaging; parasitic noise; power semiconductor device; thermomechanical reliability; Bonding; Electronic packaging thermal management; Electronics packaging; Integrated circuit packaging; Polymer films; Power electronics; Power semiconductor devices; Power system interconnection; Semiconductor device packaging; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934561
  • Filename
    934561