DocumentCode
3255233
Title
Dimple-array interconnect technique for packaging power semiconductor devices and modules
Author
Wen, Simon S. ; Huff, Daniel ; Lu, Guo-Quan
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2001
fDate
2001
Firstpage
69
Lastpage
74
Abstract
This paper reports a simple non-wire bond interconnect technique, termed Dimple-Array Interconnect (DAI) technique for packaging power devices. Solder bumps and dimpled metal sheets that are capable of carrying large currents are utilized for interconnecting power chips. Preliminary experimental and analytical results demonstrated potential advantages of this technique such as reduced dc resistance and parasitic noises, improved heat dissipation and thermo-mechanical reliability, and lowered processing complexity. This technique also offers a potential approach for packaging power electronics modules
Keywords
modules; power semiconductor devices; semiconductor device packaging; DC resistance; dimple-array interconnect; heat dissipation; integrated power electronics module; packaging; parasitic noise; power semiconductor device; thermomechanical reliability; Bonding; Electronic packaging thermal management; Electronics packaging; Integrated circuit packaging; Polymer films; Power electronics; Power semiconductor devices; Power system interconnection; Semiconductor device packaging; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934561
Filename
934561
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