Title :
Novel monitoring method and long-term reliabitity evaluation of power semiconductor devices in power utilities
Author :
Horiuchi, Toshikazu ; Sugawara, Yoshitaka
Author_Institution :
Tech. Res. Center, Kansai Electr. Power Co. Inc., Hyogo, Japan
Abstract :
In this paper, the relationship between failure rates of power semiconductor devices and their operation period is investigated to assure reliability and improve the renewal period of such equipment. And a novel monitoring method using a leakage current vector is proposed, and its superiority is estimated for the first time
Keywords :
failure analysis; leakage currents; monitoring; power semiconductor devices; semiconductor device reliability; failure rate; leakage current vector; power semiconductor device; power utility; reliability monitoring; Circuit simulation; Condition monitoring; Degradation; Leakage current; Power semiconductor devices; Rectifiers; Semiconductor device reliability; Semiconductor diodes; Virtual manufacturing; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934562
