Title :
High power LDMOS for cellular base station applications
Author :
Shindo, M. ; Morikawa, M. ; Fujioka, T. ; Nagura, K. ; Kurotani, K. ; Odaira, K. ; Uchiyama, T. ; Yoshida, I.
Author_Institution :
Semicond. & Integrated Circuits Group, Hitachi Ltd., Tokyo, Japan
Abstract :
A 2.2-GHz Si Power LDMOS (Laterally Diffused MOS) with an output power of 150 W and a drain efficiency of 47%, both higher than that of conventional devices, was developed for cellular base station applications. Also higher reliability is ensured by preventing the hot electron degradation. The LDMOS has a double-doped offset structure and an SG (Second Gate) structure
Keywords :
UHF field effect transistors; cellular radio; hot carriers; power MOSFET; semiconductor device reliability; 150 W; 2.2 GHz; 47 percent; Si; cellular base station; double-doped offset structure; drain efficiency; high-power LDMOS transistor; hot electron degradation; output power; reliability; second gate structure; Base stations; Cellular phones; Costs; Degradation; Electrons; MOSFETs; Multiaccess communication; Power amplifiers; Power generation; Power system reliability;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934568
