Title :
A high efficiency high power GaAs push-pull FET for W-CDMA base stations
Author :
Inoue, K. ; Ebihara, K. ; Haematsu, H. ; Yamaki, F. ; Igarashi, T. ; Takahashi, H. ; Fukaya, J.
Author_Institution :
Fujitsu Quantum Devices Ltd, Yamanashi, Japan
Abstract :
A 240 W push-pull FET for the base stations of the third generation systems has been developed. The high gain and high efficiency performance and excellent DC behavior under high temperature of the FET chip contributes to realize such a high power operation. The developed FET achieved 240 W (53.8 dBm) output power, 12.0 dB linear gain and 50% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology ever reported
Keywords :
III-V semiconductors; UHF field effect transistors; cellular radio; code division multiple access; gallium arsenide; power field effect transistors; 12.0 dB; 2.14 GHz; 240 W; 50 percent; DC characteristics; GaAs; GaAs push-pull FET; W-CDMA cellular base station; high power operation; linear gain; output power; power added efficiency; third generation system; Base stations; FETs; Gallium arsenide; Gold; Multiaccess communication; Performance gain; Power generation; Radio frequency; Temperature dependence; Thermal resistance;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934569
