A high efficiency high power GaAs push-pull FET for W-CDMA base stations

Author

Inoue, K. ; Ebihara, K. ; Haematsu, H. ; Yamaki, F. ; Igarashi, T. ; Takahashi, H. ; Fukaya, J.

Author_Institution

Fujitsu Quantum Devices Ltd, Yamanashi, Japan

fYear

2001

fDate

2001

Firstpage

111

Lastpage

114

Abstract

A 240 W push-pull FET for the base stations of the third generation systems has been developed. The high gain and high efficiency performance and excellent DC behavior under high temperature of the FET chip contributes to realize such a high power operation. The developed FET achieved 240 W (53.8 dBm) output power, 12.0 dB linear gain and 50% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology ever reported

Keywords

III-V semiconductors; UHF field effect transistors; cellular radio; code division multiple access; gallium arsenide; power field effect transistors; 12.0 dB; 2.14 GHz; 240 W; 50 percent; DC characteristics; GaAs; GaAs push-pull FET; W-CDMA cellular base station; high power operation; linear gain; output power; power added efficiency; third generation system; Base stations; FETs; Gallium arsenide; Gold; Multiaccess communication; Performance gain; Power generation; Radio frequency; Temperature dependence; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934569

Filename

934569