Title :
A study on wide RBSOA of 4.5 kV power pack IGBT
Author :
Yoshikawa, Koh ; Koga, Takeharu ; Fujii, Takeshi ; Nishiura, Akira ; Takahashi, Yoshikazu
Author_Institution :
Fuji Electr. Res. & Dev. Ltd., Matsumoto, Japan
Abstract :
In this paper, high current turn-off capability of the 4.5 kV IGBTs is discussed. The dynamic avalanche phenomenon during a turn-off period limits the RBSOA (Reverse Bias Safety Operating Area) due to high impact ionization rate. It is demonstrated that the wide RBSOA can be realized with even a thin base layer. The newly-designed IGBT has successfully achieved the smaller turn-off dissipation loss and the sufficient RBSOA, simultaneously
Keywords :
avalanche breakdown; impact ionisation; insulated gate bipolar transistors; power supplies to apparatus; 4.5 kV; current turn-off dissipation loss; dynamic avalanche; impact ionization; power pack IGBT; reverse bias safety operating area; Electrical resistance measurement; Electrons; Impact ionization; Insulated gate bipolar transistors; Production facilities; Research and development; Space charge; Threshold voltage; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934570
