Title :
6.5 kV-modules using IGBTs with field stop technology
Author :
Bauer, J.G. ; Auerbach, F. ; Porst, A. ; Roth, R. ; Ruething, H. ; Schilling, O.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circuit ruggedness are experimentally demonstrated at 4.4 kV line voltage and 125°C temperature. The turn off behavior is verified at the twofold nominal current
Keywords :
insulated gate bipolar transistors; modules; power semiconductor diodes; 125 C; 6.5 kV; 600 A; IGBT/diode chipset; field stop technology; on-state voltage; power module; safe operating area; short-circuit current; turn-off characteristics; turn-on characteristics; Design optimization; Diodes; Insulated gate bipolar transistors; Inverters; Ion implantation; Low voltage; Power transmission; Short circuit currents; Temperature; Voltage fluctuations;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934571
