Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

We propose here and experimentally demonstrate a novel breakdown termination termed The 3D-RESURF Termination that can be applied to a large class of high to ultra-high voltage devices, such as diodes, thyristors, IGBTs, etc. The novel termination is based on the 3D RESURF concept (lateral super-junction) proposed by us and others for lateral integrable devices. We have fabricated vertical diodes and IGBTs rated at 6.5 kV and demonstrated that the use of 3D RESURF p and n layers placed between adjacent p+ floating rings resulted in maximum breakdown voltage (6.5 kV). This is 2.5 kV larger than the breakdown voltage obtained from a standard field ring terminated device fabricated side by side on the same chip. Moreover, the 3D-RESURF edge termination uses a total length of 1 mm, which is only 60% of standard 6.5 kV JTE terminations. This results in area saving of up to 40%, depending on the active area of the chip