• DocumentCode
    3255454
  • Title

    A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact

  • Author

    Fujishima, N. ; Sugi, A. ; Suzuki, T. ; Kanjiwara, S. ; Matsubara, K. ; Nagayasu, Y. ; Salama, C.A.T.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    A trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, and characterized. The TLPM/S is formed along the sidewalls of the trenches so as to reduce the device pitch and realize very small on-resistance per unit area. The fabricated TLPM/S, whose device pitch is 3.6 μm, shows a specific on-resistance of 72 mΩ-mm2 for a breakdown voltage of 73 V, which is close to the estimated silicon limit for this voltage class of devices
  • Keywords
    power MOSFET; semiconductor device breakdown; 3.6 mum; 73 V; breakdown voltage; high-density device; specific on-resistance; trench bottom source contact; trench lateral power MOSFET; Anisotropic magnetoresistance; Capacitance; Contacts; Etching; Laboratories; MOSFET circuits; Power MOSFET; Process design; Research and development; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934576
  • Filename
    934576
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255454