Title :
Using two-dimensional filament modeling to predict Ldmos and Scrldmos behavior under high current ESD conditions
Author :
Pendharkar, Sameer ; Hower, Phil ; Steinhoff, Robert ; Brodsky, Jonathan ; Devore, Joe ; Grose, Bill
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A novel 2D-simulation method is used to simulate major aspects of the formation of the current filament and to help understand and predict the level of ESD robustness in lateral power devices
Keywords :
electrostatic discharge; power MOSFET; semiconductor device models; ESD robustness; LDMOS transistor; SCRLDMOS transistor; current filamentation; lateral power device; two-dimensional model; Bipolar transistors; Breakdown voltage; Electrostatic discharge; Failure analysis; IEC standards; Instruments; Predictive models; Resistors; Robustness; Switches;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934580
