Improvement of breakdown characteristics of LDMOSFETs with uneven racetrack sources for PDP driver applications

Author

Roh, Tae Moon ; Lee, Dae Woo ; Kim, Jongdae ; Koo, Jin Gun ; Cho, Kyoung-Ik

Author_Institution

Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2001

fDate

2001

Firstpage

165

Lastpage

168

Abstract

The electrical characteristics of n- and p-LDMOSFETs with uneven racetrack source (URS) and conventional racetrack source (CRS) were investigated to apply PDP driver. The breakdown voltage of p-LDMOSFET with URS is 25% higher than that of p-LDMOSFET with CRS and while the saturated drain current of p-LDMOSFET with URS is only 6% lower than that of p-LDMOSFET with CRS. The output of PDP data driver with uneven racetrack LDMOSFETs swings very well from the ground to high supply voltage (130 V) and both rising time and falling time of the output voltage for the PDP data driver were shorter than 160 ns

Keywords

driver circuits; plasma displays; power MOSFET; semiconductor device breakdown; 130 V; 160 ns; LDMOSFET; PDP driver; breakdown voltage; conventional racetrack source; electrical characteristics; falling time; power transistor; rising time; saturated drain current; uneven racetrack source; Annealing; Boron; Carbon capture and storage; Driver circuits; Electric breakdown; Electric variables; Laboratories; Moon; Silicon; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934581

Filename

934581