• DocumentCode
    3255579
  • Title

    0.6 μm BiCMOS based 15 and 25 V LDMOS for analog applications

  • Author

    Kawaguchi, Yusuke ; Nakamura, Kazutoshi ; Karouji, Kumiko ; Watanabe, Kiminori ; Yamaguchi, Yoshihiro ; Nakagawa, Akio

  • Author_Institution
    Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    In the present paper, we report the development of complementally 25 V LDMOS, 15 V n-ch LDMOS, 18 V npn/pnp and 5 V CMOS. The developed LDMOS achieved high on-state breakdown voltages for the gate voltage of 5.0 V. The on-resistance values of the developed 15 V and 25 V n-ch LDMOS achieves 22.7 and 27.5 mn mm2, respectively. The characteristics of bipolar transistors and CMOS are also sufficiently good
  • Keywords
    BiCMOS analogue integrated circuits; power MOSFET; semiconductor device breakdown; 0.6 micron; 15 V; 25 V; BiCMOS analog IC; LDMOS transistor; on-resistance; on-state breakdown voltage; power MOSFET; Analog circuits; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; Fabrication; Impurities; Indium tin oxide; MOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934582
  • Filename
    934582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255579