Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors

Author

Fedison, J.B. ; Chow, T.P. ; Ghezzo, M. ; Kretchmer, J.W.

Author_Institution

Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2001

fDate

2001

Firstpage

175

Lastpage

178

Abstract

In this paper, we report static and switching characteristics of 1 kV and 3 kV 4H-SiC GTO thyristors with various anode-gate geometries. Measured switching results on two different anode geometries indicate the involute layout produces the fastest turn-on response while the concentric layout produces the fastest turn-off, as similar to silicon thyristors. Strong temperature dependence of both the static and switching characteristics of these GTOs has been observed and is attributed to acceptor ionization in the p⁺ anode and the increase of carrier lifetime with temperature

Keywords

carrier lifetime; silicon compounds; thyristors; wide band gap semiconductors; 1 kV; 3 kV; SiC; acceptor ionization; anode/gate geometry; carrier lifetime; concentric layout; high-voltage 4H-SiC GTO thyristor; involute layout; static characteristics; switching characteristics; temperature dependence; turn-off characteristics; turn-on characteristics; Anodes; Area measurement; Charge carrier lifetime; Geometry; Implants; Silicon carbide; Temperature dependence; Thermal conductivity; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934583

Filename

934583