Title :
Design consideration for 2 kV SiC-SIT
Author :
Onose, Hidekatsu ; Yatsuo, Tsutomu ; Watanabe, Atsuo ; Yokota, Takeshi ; Ishikawa, Toru ; Sanpei, Isamu ; Someya, Tomoyuki ; Kobayashi, Yutaka
Author_Institution :
Hitachi Res. Lab., Hitachi Ltd., Japan
Abstract :
Process technologies of the novel Static Induction transistor with source-gate self-aligned and overlapping (SAO) structures are considered in order to reduce the restrictions of alignment problems. A SiC-SIT with SAO structure is fabricated by using aluminum implantation for p gate on 4H n-type SiC. It is found that the SAO structure can be fabricated as expected by observing the cross sectional structure. Very low specific on-resistance of 39 mΩ cm2 is successfully obtained. By reducing a unit cell, lower on-resistance can be expected as a half of this work
Keywords :
aluminium; ion implantation; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 2 kV; SiC static induction transistor; SiC:Al; aluminum implantation; cross-sectional structure; power device; source-gate self-aligned and overlapping structure; specific on-resistance; unit cell; Aluminum; Electron devices; Epitaxial growth; FETs; Fabrication; Ion implantation; Low voltage; MOSFETs; Research and development; Silicon carbide;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934584
