High frequency application of high transconductance surface-channel diamond field-effect transistors

Author

Umezawa, Hitoshi ; Taniuchi, Hirotada ; Arima, Takuya ; Ishizaka, Hiroaki ; Fujihara, Naoki ; Ohba, Yoshikazu ; Tachiki, Minoru ; Kawarada, Hiroshi

Author_Institution

Waseda Univ., Tokyo, Japan

fYear

2001

fDate

2001

Firstpage

195

Lastpage

198

Abstract

High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (f_T) and maximum oscillation frequency (f_max) of surface-channel diamond metal-semiconductor (MES)FET with 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (C_GS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher f_T of 4.8 GHz and f_max of 11 GHz in spite of comparatively low transconductance. An f_T of more than 20 GHz is expected at 0.5 μm gate MISFET, because transconductance of a 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated

Keywords

MISFET; Schottky gate field effect transistors; capacitance; diamond; elemental semiconductors; microwave field effect transistors; 11 GHz; 2.2 GHz; 20 GHz; 7 GHz; C; H-terminated surface channel; MESFET; MISFET; cut-off frequency; gate insulator insertion; high frequency operation; maximum oscillation frequency; source-gate capacitance; surface-channel diamond field-effect transistors; transconductance; Electrodes; FETs; Fabrication; MESFETs; MISFETs; Metal-insulator structures; Plasma measurements; Plasma temperature; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934588

Filename

934588