• DocumentCode
    3255755
  • Title

    Radio frequency characterization of bonding wire interconnections in a molded chip

  • Author

    Chuang, Jun Yi ; Tseng, Sung Pi ; Yeh, J. Andrew

  • Author_Institution
    Inst. of Microelectromech. Syst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    2004
  • fDate
    1-4 June 2004
  • Firstpage
    392
  • Abstract
    Radio frequency characteristics at frequencies ranging from 0.1 GHz to 10 GHz of bonding wire interconnections in a low-cost lightweight 64 pin 9 mm×9 mm molded chip were investigated. The work in this paper was performed to realize the length effect, parasitic effect, impedance matching, and crosstalk phenomena of bonding wires in a molded chip. Bonding wires of length between 2 mm (the shortest) and 2.5 mm (the longest) in our molded chips were selected as test samples. Agreement between measurements and simulations from HFSS was observed, across 10 GHz of bandwidth, to be within 1 dB for return loss and 0.2 dB for insertion loss, respectively. Experimental results of 2 mm and 2.5 mm long bonding wires show that resistive and inductive effects of the wires themselves (i.e. length effect) have little impact on S-parameters in these test chips. In addition, the RF performance with a proposed matching capacitor to the G-S-G single-ended bonding wire and crosstalk phenomena between two adjacent signal wires was also evaluated. This research also shows definitely that parasitic effects result from the molding and pads in these test chips play certainly important roles on insertion loss and return loss.
  • Keywords
    S-parameters; crosstalk; impedance matching; integrated circuit interconnections; integrated circuit modelling; integrated circuit packaging; lead bonding; 0.1 to 10 GHz; 10 GHz; 2 mm; 2.5 mm; 9 mm; G-S-G single-ended bonding wire; S-parameters; bonding wire RF characterization; bonding wire interconnections; crosstalk phenomena; impedance matching; inductive effects; insertion loss; length effect; low-cost lightweight chip; matching capacitor; molded chip; parasitic effect; resistive effects; return loss; Bandwidth; Bonding; Crosstalk; Impedance matching; Insertion loss; Loss measurement; Radio frequency; Semiconductor device measurement; Testing; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2004. Proceedings. 54th
  • Print_ISBN
    0-7803-8365-6
  • Type

    conf

  • DOI
    10.1109/ECTC.2004.1319370
  • Filename
    1319370