Title :
A 6 kV thyristor fabricated by direct wafer bonding
Author :
Hobart, K.D. ; Kub, F.J. ; Pattanayak, D. ; Piccone, D. ; Pate, M. ; Hits, D. ; Rodrigues, R. ; Ayele, G. ; Colinge, C.A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
High voltage thyristors have been fabricated by direct wafer bonding. Thyristors were fabricated by joining anode and cathode wafers nominally designed for 6 kV operation. Wafer bonded 100 mm diameter thyristors with breakdown voltages exceeding 7 kV were successfully fabricated. Bonded transistors with forward voltage drops comparable to control devices showed lower switching loss possibly due to advantageous recombination at the bond interface. This is the first demonstration of large area bonded power devices with breakdown voltages exceeding 6 kV
Keywords :
electric potential; semiconductor device breakdown; thyristors; wafer bonding; 100 mm; 6 kV; breakdown voltage; direct wafer bonding; forward voltage drops; high voltage thyristor; large area bonded power devices; recombination; switching loss; Annealing; Boron; Fabrication; Gettering; Leakage current; Surface resistance; Temperature; Thyristors; Voltage; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934592
