Title :
A novel 6.5 kV IGCT for high power current source inverters
Author :
Weber, A. ; Kern, P. ; Dalibor, T.
Abstract :
The emphasis of this paper is to show how the design of the Integrated Gate Commutated Thyristor (IGCT) and the commutation inductance of the drive influence the dynamic over-voltage in the current source inverter (CSI). Different semiconductor design tools to reduce dynamic over-voltage are described and the impact on other parameters such as device losses is presented. Differences between the application in CSI and voltage source inverter (VSI) are discussed
Keywords :
commutation; constant current sources; invertors; overvoltage; thyristor applications; thyristors; 6.5 kV; commutation inductance; device loss; dynamic overvoltage; high-power current source inverter; integrated gate commutated thyristor; semiconductor design tool; Circuit testing; Clamps; Inductance; Inductors; Inverters; Semiconductor diodes; Snubbers; Switches; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934593
