Title :
100 V trench MOS barrier Schottky rectifier using thick oxide layer (TO-TMBS)
Author :
Shimizu, Takashi ; Kunori, Shinji ; Kitada, Mime ; Sugai, Akihiko
Author_Institution :
R&D Center, Shindengen Electr. Manuf. Co. Ltd., Saitama, Japan
Abstract :
We are the first to fabricate a 100 V class low VF TMBS with VB=107 V, JR=8×10-5 A/cm2 at VR=90 V and VF=0.63 V at JF=180 A/cm2. This was accomplished by using a deep trench gate, a thick oxide layer (=0.8 μm) along the trench and a high carrier concentration (=1×1016 cm-3) uniformly doped wafer. The relationships between breakdown voltage, oxide thickness and carrier concentration were studied and our conclusions are presented in this paper. We call this SBD the Thick Oxide TMBS (TO-TMBS). With the TO-TMBS, we have reduced VF by 17% compared to the conventional SBD
Keywords :
MIS devices; Schottky diodes; carrier density; power semiconductor diodes; semiconductor device breakdown; solid-state rectifiers; 100 V; TO-TMBS; breakdown voltage; carrier concentration; oxide thickness; thick oxide layer; trench MOS barrier Schottky rectifier; Costs; DC-DC power converters; Electronic equipment; Leakage current; Microcomputers; Neodymium; Rectifiers; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934600
