Title :
Flip chip power MOSFET: a new wafer scale packaging technique
Author :
Arzumanyan, Aram ; Sodhi, Ritu ; Kinzer, Dan ; Schofield, Hazel ; Sammon, Tim
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
This paper describes the first flip chip power MOSFET device with the lowest RDSON per footprint area in the industry. This device, with the same electrical characteristics as an SO8 packaged device, takes only 30% of the SO8 footprint. RSi × Footprint Area as low as 59 mOhm.mm2 were achieved for bi-directional device and 98 mOhm.mm2 for single device at 4.5 VGS, a 4-6 times reduction compared to regular packaged MOSFET. The typical applications for these parts include battery charging and load switching in cell phones and laptops
Keywords :
flip-chip devices; power MOSFET; semiconductor device packaging; bi-directional device; electrical characteristics; flip-chip power MOSFET; footprint area; on-resistance; wafer-scale packaging; Cellular phones; Chip scale packaging; Electrodes; Flip chip; MOSFET circuits; Metallization; Power MOSFET; Rectifiers; Silicon; Surface resistance;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934602
