Mechanism of power dissipation capability of power MOSFET devices: comparative study between LDMOS and VDMOS transistors

Author

Chung, Young S. ; Valenzuela, Ofelia ; Baird, Bob

Author_Institution

DigitalDNA Lab., Motorola, Mesa, AZ, USA

fYear

2001

fDate

2001

Firstpage

275

Lastpage

278

Abstract

Interaction between the electrical power and thermal energy generated due to power dissipation is fundamental in understanding the safe operating limit of semiconductor devices in both transient and steady-state operation. This work deals with the power dissipation process from the device structure aspects. The power dissipation capability of the lateral DMOS device is compared to that of the vertical DMOS device for a given technology through theoretical and experimental analyses. The comparative study in the transient power capability between two different device structures provides interesting clues to understand the problem of the power dissipation mechanics of the power devices

Keywords

power MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; transient analysis; LDMOS transistors; VDMOS transistors; electrical power thermal energy interaction; electrothermal device simulation; hot snapback breakdown; power MOSFET devices; power dissipation capability mechanism; safe operating limit; steady-state operation; transient operation; transient power capability; BiCMOS integrated circuits; Clamps; Couplings; MOSFET circuits; Power MOSFET; Power dissipation; Temperature distribution; Temperature sensors; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934608

Filename

934608